SB Krupanidhi Home Page

Quantum Structures & Devices Lab

MATERIALS RESEARCH CENTRE
Indian Institute of Science, Bangalore
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Upcoming Events


This section will feature a list of upcoming events that will include workshops, conferences etc.

Research Highlights


Growth of low dimensional III-V semiconductor heterostructures for infra-red detection involving techniques such as Molecular Beam Epitaxy, Metal-Organic Chemical Vapor Deposition and Multi-component functional oxide thin films deposited by Multi-magnetron reactive sputtering, ECR plasma assisted growth, Excimer laser ablation and sol-Gel technique

Low energy ion induced effects in multi-component oxide films

Recent Publications


Transport properties of solution processed Cu 2 SnS 3/AZnO heterostructure for low cost photovoltaics, S Dias, B Murali, SB Krupanidhi, Solar Energy Materials and Solar Cells 143, 152-158 (2015)
http://www.sciencedirect.com/science/article/pii/S0927024815003153

Solution processible Cu 2 SnS 3 thin films for cost effective photovoltaics: Characterization, S Dias, B Murali, SB Krupanidhi, Materials Chemistry and Physics (2015)
http://www.sciencedirect.com/science/article/pii/S0254058415304168

 

Oxides

The ‘Oxide’ based Perovskite materials are well known for their piezoelectric, ferroeletric, dielectric properties.

Our group had carried out fundamental studies on several piezoelectric, ferroelectric, multiferroic thin films, artificial superlattice systems and nanostrcutures which enabled us to develop several technologies such as Mems for microsensors and microactuators, electron emission in microwave tube applications, very high density memory devices in nano scale and tunable microwave devices.

Currently we are embarked upon realization of emerging multicomponent oxides based epilayers and thin films for energy storage and harvesting devices and memory applications based on resistive switching in amorphous and polycrystalline perovskites.

III-Nitrides

The Group III-V compound material systems which are well known for their tunable properties (as a result of alloying) has stirred the electronic industry quite a lot.

Efforts in early stages were on epitaxial GaAs based optoelectronic devices such as GaAs / Ge heterosturucture solar cells and multijunction quantum well infrared photodetectors by MOCVD.

In recent years our interest had shifted from the arsenic based III-V to eco-friendly III- nitride compound semiconductors which led to the establishment of nitride MBE Lab. Initial efforts were aimed at the basic growth optimization, fundamental understanding by extensive characterization. On going research is focused on developing quantum structures for advanced and efficient optoelectronic devices.

Emerging Nanomaterials

The increasing technological demands has pushed everyone to choose performance oriented materials without the consideration of environmental hazards.

Therefore in recent times considerable interest has been generated towards the non-toxic, environment and energy friendly materials as well as processes.

Several nanomaterial systems are proven to be effective in that direction and our group is focused on developing such technologies such as eco-friendly absorber Nanostructured materials for solar cells and 2-D materials for high performance and energy efficient devices.