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Last Updated: April 28, 2007
Default faculty mailing address: Materials
Research Centre, Indian Institute of Science(IISc),
Bangalore - 560012, INDIA.
Phone: Country code-91; Bangalore city
code 80 from abroad and 080 from India.
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Brief Biodata:
Srinivasan (Vasu) Raghavan obtained his BE
and ME degrees in Metallurgy from the Visvesvaraya
Regional Engineering College (Now VNIT),
Nagpur and the Indian Institute of Science in
Bangalore respectively. Following his ME he
obtained his PhD from The
Pennsylvania State Universityin Materials
Science and Engineering. For his PhD he worked
on zirconia based materials for thermal barrier
coating applications. He continued there as
a post doc, working on growth of group III-A
(In, Ga, Al) nitride compound semiconductors
byMOCVD with Joan
Redwing's group.
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Research:
- Growth of thin films, nano-structures and
bulk crystals.
- Growth of group IIIA (Ga, In, Al) nitrides
by chemical vapor deposition and wet chemical
routes.
- Stress and defect structure evolution during
growth of thin films
- Effects of stress on crystal properties and
device performance
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More Details
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Publications:
- Srinivasan Raghavan and
Joan M. Redwing, "Growth Stresses and Cracking
in MOCVD GaN films on (111) Si: Part I, AlN
Buffer Layers," Journal of Applied Physics,
98, 023514, 2005. Presented at the 19th Conference
on Crystal Growth and Epitaxy, AACGE/West, Lake
Tahoe.
- Srinivasan Raghavan and
Joan M. Redwing, "Growth Stresses and Cracking
in MOCVD GaN films on (111) Si: Part II, Graded
AlGaN Buffer Layers," Journal of Applied
Physics, 98, 023515, 2005. Presented at the
2004 MRS Fall Meeting, Boston.
- Srinivasan Raghavan, Jeremy
Acord and Joan M. Redwing,"Direct Evidence
for Tensile Stresses due to Coalescence During
Growth of GaN on Sapphire Using a 600 C AlN
buffer layer," Applied Physics Letters,
86, 261907, 2005.
- Srinivasan Raghavan and
Joan M. Redwing, "Effect of AlN interlayers
on growth stresses in GaN films grown on (111)
Si by MOCVD," Applied Physics Letters,
87, 142101, 2005. Presented at the 16 th American
Conference on Crystal Growth and Epitaxy, Big
Sky Resort.
- Srinivasan Raghavan, Xiaojun
Weng, Elizabeth Dickey and Joan M. Redwing,
"Growth Stress and TEM Studies of Structural
Evolution During Metal Organic Chemical Vapor
Deposition of GaN on (111) Si Using Graded AlGaN
Buffer Layers," Applied Physics Letters,
05/2005.
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More publications
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