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  FACULTY - Srinivasan Raghavan (Vasu), Assistant Professor  
 
 
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Last Updated: April 28, 2007
Default faculty mailing address: Materials Research Centre, Indian Institute of Science(IISc), Bangalore - 560012, INDIA.
Phone: Country code-91; Bangalore city code 80 from abroad and 080 from India.

 

Srinivasan Raghavan (Vasu)
Assistant Professor

Ph:
Off: +91-80-2293 2783
Fax:+91-80-2360 7316
E-mail: sraghavan@mrc.iisc.ernet.in

Pages to be visited:
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Publications
Research Group


Brief Biodata:

Srinivasan (Vasu) Raghavan obtained his BE and ME degrees in Metallurgy from the Visvesvaraya Regional Engineering College (Now VNIT), Nagpur and the Indian Institute of Science in Bangalore respectively. Following his ME he obtained his PhD from The Pennsylvania State Universityin Materials Science and Engineering. For his PhD he worked on zirconia based materials for thermal barrier coating applications. He continued there as a post doc, working on growth of group III-A (In, Ga, Al) nitride compound semiconductors byMOCVD with Joan Redwing's group.


Research:
  • Growth of thin films, nano-structures and bulk crystals.
  • Growth of group IIIA (Ga, In, Al) nitrides by chemical vapor deposition and wet chemical routes.
  • Stress and defect structure evolution during growth of thin films
  • Effects of stress on crystal properties and device performance
More Details

Publications:
  1. Srinivasan Raghavan and Joan M. Redwing, "Growth Stresses and Cracking in MOCVD GaN films on (111) Si: Part I, AlN Buffer Layers," Journal of Applied Physics, 98, 023514, 2005. Presented at the 19th Conference on Crystal Growth and Epitaxy, AACGE/West, Lake Tahoe.
  2. Srinivasan Raghavan and Joan M. Redwing, "Growth Stresses and Cracking in MOCVD GaN films on (111) Si: Part II, Graded AlGaN Buffer Layers," Journal of Applied Physics, 98, 023515, 2005. Presented at the 2004 MRS Fall Meeting, Boston.
  3. Srinivasan Raghavan, Jeremy Acord and Joan M. Redwing,"Direct Evidence for Tensile Stresses due to Coalescence During Growth of GaN on Sapphire Using a 600 C AlN buffer layer," Applied Physics Letters, 86, 261907, 2005.
  4. Srinivasan Raghavan and Joan M. Redwing, "Effect of AlN interlayers on growth stresses in GaN films grown on (111) Si by MOCVD," Applied Physics Letters, 87, 142101, 2005. Presented at the 16 th American Conference on Crystal Growth and Epitaxy, Big Sky Resort.
  5. Srinivasan Raghavan, Xiaojun Weng, Elizabeth Dickey and Joan M. Redwing, "Growth Stress and TEM Studies of Structural Evolution During Metal Organic Chemical Vapor Deposition of GaN on (111) Si Using Graded AlGaN Buffer Layers," Applied Physics Letters, 05/2005.

More publications

 

 

 
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