Last Updated: April 28, 2007
Default faculty mailing address: Materials
Research Centre, Indian Institute of Science(IISc),
Bangalore - 560012, INDIA.
Phone: Country code-91; Bangalore city
code 80 from abroad and 080 from India.
Following his Ph. D.. from Delhi University in Solid
State Physics in 1981, Prof. Krupanidhi held a
post doctoral positions at Queen's University,
Canada till 1984. He then worked as Principal
Scientist at Motorola in Albuquerque till 1988
prior to joining the Pennsylvania State University
as a Professor. Since 1995 he has been a member
of the faculty at MRC.
|J.C. BOSE National
Fellowship Award for the year 2008
Prof. S. B. Krupanidhi, Chairman, Materials
Research Centre has been selected for J. C.
Bose National fellowship for the year 2008,
constituted by Department of Science and Technology.
The J C Bose Fellowship was instituted to
give a boost to scientific research in the country
on August 5, 2005. The Prime Minister, in his
speech made on the occasion of the S.S, Bhatnagar
Awards function held on 25th September 2005,
had stated that the three Awards announced recently,
viz., Ramanujam Fellowship, J.C. Bose Fellowship
and also Fellowships for Scientists and Technologists
of Indian Origin, are part of the Government's
effort to create exciting career opportunities
for Scientists to retain their talent at home.
The fellowship, constituted by the Department
of Science and Technology, Government of India,
recognizes active, performing scientists and
engineers in the country, for their outstanding
performance and contributions, below the age
of 60 years. The fellowships are scientist-specific,
very selective and have close academic monitoring.
A High level Search-cum-Selection Committee
under the Prime Minister of India makes the
selection. The J C Bose Fellows are provided
a fellowship of Rs 20,000 per month in addition
to their regular income. A contingency of Rs
5 lakh per annum is provided towards conference
participation and other expenses. The fellowship
is for a term of five years initially.
- Growth of low dimensional III-V semiconductor
heterostructures for infra-red detection involving
techniques such as Molecular Beam Epitaxy, Metal-Organic
Chemical Vapor Deposition and Multi-component
functional oxide thin films deposited by Multi-magnetron
reactive sputtering, ECR plasma assisted growth,
Excimer laser ablation and sol-Gel technique
- Low energy ion induced effects in multi-component
- Epitaxy & Ion-surface interactions
- Ferroelectrics and Dielectrics for Random
Access Memory applications
- Artificial superlattices of ferroelectric
and dielectrics for tunable microwave device
- Studying the coupled dynamics of electrical
and magnetic domains in artificial superlattices
of multiferroics and dielectrics
- Synthesis and Characterization of Perovskite
nanostructures using physical and chemical techniques.
- Ayan Roy Chaudhuri, R. Ranjith, S.
B. Krupanidhi, R.V.K Mangalam, and
A. Sundaresan. S. B. Krupanidhi, Appl. Phys.
Lett. 87, 90, 122902 (2007).
- Satyendra Singh and S. B. Krupanidhi,
Appl. Phys. A 87, pp. 27-31 (2007).
- Asis Sarkar and S. B. Krupanidhi,
Journ.Appl. Phys. In press (2007).
- Somenath Bose and S. B. Krupanidhi,
Appl. Phys. Lett. In Press (2007).
- Palash Roy Choudhury and S. B. Krupanidhi,
Solid State Commun. In Press (2007).