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Updated on: March 15, 2014  
  FACULTY - S.B. Krupanidhi, Professor  

Last Updated: March 15, 2014
Default faculty mailing address: Materials Research Centre, Indian Institute of Science(IISc), Bangalore - 560012, INDIA.
Phone: Country code-91; Bangalore city code 80 from abroad and 080 from India.


S. B. Krupanidhi

Off: +91-80-2360 1330
Res: +91-80-2341 8550
Fax:+91-80-3600 683
E-mail: sbk@mrc.iisc.ernet.in

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Brief Biodata:

Following his Ph. D.. from Delhi University in Solid State Physics in 1981, Prof. Krupanidhi held a post doctoral positions at Queen's University, Canada till 1984. He then worked as Principal Scientist at Motorola in Albuquerque till 1988 prior to joining the Pennsylvania State University as a Professor. Since 1995 he has been a member of the faculty at MRC.

Awards and Recogitions:

  • Two Engineering Invention Awards at Motorola, USA, 1986
  • MRSI Medal, India, 1997
  • Fellow of Indian Academy of Sciences, 2003
  • VASVIK Medal, 2004
  • MRS Superconductivity-Materials Science Award, 2004
  • Tatachem Chair Professor, Indian Institute of Science, 2006
  • Rustum Choksi Medal for research excellence, 2006
  • J.C. Bose Fellow, (2008-present)
  • Prof. S. B. Krupanidhi, Materials Research Centre has been selected for J. C. Bose National fellowship for the year 2008, constituted by Department of Science and Technology. The J C Bose Fellowship was instituted to give a boost to scientific research in the country on August 5, 2005. The Prime Minister, in his speech made on the occasion of the S.S, Bhatnagar Awards function held on 25th September 2005, had stated that the three Awards announced recently, viz., Ramanujam Fellowship, J.C. Bose Fellowship and also Fellowships for Scientists and Technologists of Indian Origin, are part of the Government's effort to create exciting career opportunities for Scientists to retain their talent at home. The fellowship, constituted by the Department of Science and Technology, Government of India, recognizes active, performing scientists and engineers in the country, for their outstanding performance and contributions, below the age of 60 years. The fellowships are scientist-specific, very selective and have close academic monitoring. A High level Search-cum-Selection Committee under the Prime Minister of India makes the selection. The J C Bose Fellows are provided a fellowship of Rs 20,000 per month in addition to their regular income. A contingency of Rs 5 lakh per annum is provided towards conference participation and other expenses. The fellowship is for a term of five years initially.
  • Prof. CNR Rao Lecture Prize, MRSI, 2010
  • Fellow of Indian National Science Academy, 2012
  • Fellow of Indian National Academy of Engineering, 2012

  • Growth of low dimensional III-V and III-Nitride semiconductor heterostructures for high brightness LEDs and infra-red detection involving techniques such as Molecular Beam Epitaxy, Metal-Organic Chemical Vapor Deposition and Multi- component functional oxide thin films deposited by Multi-magnetron reactive sputtering, ECR plasma assisted growth, Excimer laser ablation and sol-Gel technique.
  • Low energy ion induced effects in multi-component oxide films.
  • Epitaxy & Ion-surface interactions.
  • Ferroelectrics and Dielectrics for Random Access Memory applications.
  • Artificial superlattices of ferroelectric and dielectrics for tunable microwave device application.
  • Studying the coupled dynamics of electrical and magnetic domains in artificial superlattices of multiferroics and dielectrics.
  • Synthesis and Characterization of Perovskite nanostructures using physical and chemical techniques.
More Details

  1. Murali Banavoth and S.B.Krupanidhi, Transport properties of CuIn1-xAxSe2/AZnO heterostructure for low cost thin film photovoltaics Dalton Transac,1919, 43,(2014) [COVER ARTICLE]
  2. Mahesh Kumar, Mohana K. Rajpalke, Basanta Roul, Thirumaleshwara N. Bhat, and S. B. Krupanidhi, Study of InN nanorods growth mechanism using ultrathin Au layer by plasma-assisted MBE on Si(111) Applied Nanoscience, 121, 4 (2014)
  3. Murali Banavoth and S.B. Krupanidhi, CuIn1−xAlxSe2 solar cells fabricated on the flexible substrates by co-sputtering and modified selenization, Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th ., 2011, 16-21, (2013)
  4. Murali Banavoth and S.B. Krupanidhi,Tailoring the Cu(In, Al)S2 nanostructures for photonic applications , Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th ., 2017, 16-21, (2013).
  5. Murali Banavoth, Jayanta Parui, K. G. Chandan, A. Mayoori, and S. B. Krupanidhi, Synthesis of CuS nanoplates and self-assembled hierarchical architectures by solvothermal method, Adv. Sci. Eng. Med., 105., 5 (2013)
  6. Murali Banavoth, Sandra Dias, and S. B. Krupanidhi, Near infrared photoactive Cu2ZnSnS4 thin films by co-sputtering, AIP Advances,082132, 3 (2013)
  7. Biradar, S.B. Krupanidhi, V.M. Jali, Murali Banavoth, G. Sanjeev, Electrical and Optical Properties of Electron Irradiated ZnO: Li Thin Films B, Advanced Materials Research, 257,2, (2013).
  8. Thirumaleshwara N Bhat, Mohana K Rajpalke, Basanta Roul, Mahesh Kumar, and S B Krupanidhi, Impact of substrate nitridation on the photoluminescence and photovoltaic characteristics of GaN grown on p-Si (100) by molecular beam epitaxy Journal of Materials Science: Materials in Electronics, 3371, 24 (2013)
  9. Sandra Dias, Murali Banavoth and S.B. Krupanidhi, Solgel processed Cu2SnS3films for photovoltaics, AIP Conf.Proc. ,525, 1536 (2013)
  10. M.K. Jana, P. Chithaiah, Murali Banavoth, S.B. Krupanidhi, K. Biswas and C.N.R. Rao, Near infra red detectors based on HgSe and HgCdSe quantum dots generated at the liquid-liquid interfaceJ. Mater.Chem., 6184, 1,(2013)
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