Last Updated: April 28, 2007
Default faculty mailing address: Materials
Research Centre, Indian Institute of Science(IISc),
Bangalore - 560012, INDIA.
Phone: Country code-91; Bangalore city
code 80 from abroad and 080 from India.
- Development of chemical precursors
- MOCVD of oxide thin films
- ALD of metals and metal oxides
- Thermodynamic modeling of the CVD process
- Microstructure development in MOCVD-grown
- Properties of thin films
- Rational development of volatile and non-toxic
precursors the synthesis/deposition of thin
films through chemical routes (mostly metalorganic
- Deposition of thin films of a variety of
oxides using reactors built in house and precursors
synthesized in house: ZrO2, HfO2, TiO2, Co3O4,
VO2, V2O5, oxides of Fe, oxides of Mn, Magnéli
phases of vanadium and titanium oxides, Al2O3,
and rare earth oxides.
- Deposition of thin films of metals (Cu, Co)
and metal oxides (ZrO2, vanadium oxides) in
a homemade five-channel ALD reactor.
- To understand the formation of metal oxides
from metalorganic complexes.
- The examples of Al2O3, cobalt oxides, and
vanadium oxides have been used to explore the
development of microstructure and the occurrence
of nanostructure in oxide films grown by MOCVD
from β-diketonate complexes.
- The electrical (dielectric), optical, magnetic,
and mechanical properties of the films deposited
as above are investigated with a specific view
to applying them in appropriate devices.